QQ客服 官方微博 反馈留言

	Semiconductor laser device
	HASEGAWA MITSUTOSHI; HARA TOSHITAMI; NOJIRI HIDEAKI; SEKIGUCHI YOSHINOBU; MIYAZAWA SEIICHI
	1987-11-20
著作权人	CANON INC
专利号	JP1987268175A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser device
英文摘要	PURPOSE:To eliminate an error on positioning and the limitation of integration density by making each optical outgoing direction differ at a point of time when beams from a semiconductor laser are emitted from resonance surfaces, forming one of each resonance surface by cleavage and shaping the other by etching. CONSTITUTION:An N-type GaAs layer 4, an N-type AlGaAs layer 7, a non- doped GaAs layer 8, a P-type AlGaAs layer 9 and a P-type GaAs layer 10 are grown on an N-type GaAs substrate 5 in succession, the whole surface is coated with an silicon nitride plasma CVD film, and current injection regions 11a-11c and photodetector 2a-2c sections are removed through etching, and covered with Cr and Au laminated electrodes 11, 12. The electrodes 11, 12 isolate each laser 1a-1c or the photodetector 2a-2c sections so as to be able to independently drive them. An alloy electrode 13 consisting of Au and Ge is shaped onto the back, the surface is processed vertically in a Cl2 gas atmosphere, and a groove 14 and resonator surfaces 15 are formed, and isolated by cleavage or cutting at every unit. Accordingly, semiconductor emitters and the photodetectors are easily integrated, thus stabilizing an optical output.
公开日期	1987-11-20
申请日期	1986-05-16
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/81931]
专题	半导体激光器专利数据库
作者单位	CANON INC
推荐引用方式 GB/T 7714	HASEGAWA MITSUTOSHI,HARA TOSHITAMI,NOJIRI HIDEAKI,et al. Semiconductor laser device. JP1987268175A. 1987-11-20.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。