Semiconductor laser device | |
HASEGAWA MITSUTOSHI; HARA TOSHITAMI; NOJIRI HIDEAKI; SEKIGUCHI YOSHINOBU; MIYAZAWA SEIICHI | |
1987-11-20 | |
著作权人 | CANON INC |
专利号 | JP1987268175A |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Semiconductor laser device |
英文摘要 | PURPOSE:To eliminate an error on positioning and the limitation of integration density by making each optical outgoing direction differ at a point of time when beams from a semiconductor laser are emitted from resonance surfaces, forming one of each resonance surface by cleavage and shaping the other by etching. CONSTITUTION:An N-type GaAs layer 4, an N-type AlGaAs layer 7, a non- doped GaAs layer 8, a P-type AlGaAs layer 9 and a P-type GaAs layer 10 are grown on an N-type GaAs substrate 5 in succession, the whole surface is coated with an silicon nitride plasma CVD film, and current injection regions 11a-11c and photodetector 2a-2c sections are removed through etching, and covered with Cr and Au laminated electrodes 11, 12. The electrodes 11, 12 isolate each laser 1a-1c or the photodetector 2a-2c sections so as to be able to independently drive them. An alloy electrode 13 consisting of Au and Ge is shaped onto the back, the surface is processed vertically in a Cl2 gas atmosphere, and a groove 14 and resonator surfaces 15 are formed, and isolated by cleavage or cutting at every unit. Accordingly, semiconductor emitters and the photodetectors are easily integrated, thus stabilizing an optical output. |
公开日期 | 1987-11-20 |
申请日期 | 1986-05-16 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/81931] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | CANON INC |
推荐引用方式 GB/T 7714 | HASEGAWA MITSUTOSHI,HARA TOSHITAMI,NOJIRI HIDEAKI,et al. Semiconductor laser device. JP1987268175A. 1987-11-20. |
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