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	Semiconductor light-emitting device
	FURUMIYA SATOSHI
	1986-03-06
著作权人	FUJITSU LTD
专利号	JP1986046087A
国家	日本
文献子类	发明申请
其他题名	Semiconductor light-emitting device
英文摘要	PURPOSE:To avoid a diffusion having an adverse effect on a luminescent function, and to improve yield on manufacture by interposing a P type GaAs layer having impurity concentration lower than a P type GaAs substrate between the substrate and a clad layer. CONSTITUTION:A P type GaAs buffer layer 1a having impurity concentration lower than a substrate 1 is grown on the substrate 1 in an epitaxial manner before a current limiting layer 2 is grown, and the buffer layer 1a is added and interposed between the substrate 1 and the current limiting layer 2. Accordingly, the diffusion of Zn from the substrate 1 is absorbed by the P type GaAs layer 1a, and an impurity in the P type GaAs layer 1a diffusing to the current limiting layer 2 is made largely less than Zn while an effect on a clad layer 4 of the diffusion of the impurity is prevented, thus obviating the deterioration of the functions of a PNP junction and a laser luminescent mechanism, then improving yield on the manufacture of a semiconductor light-emitting device.
公开日期	1986-03-06
申请日期	1984-08-11
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/81889]
专题	半导体激光器专利数据库
作者单位	FUJITSU LTD
推荐引用方式 GB/T 7714	FURUMIYA SATOSHI. Semiconductor light-emitting device. JP1986046087A. 1986-03-06.

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