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	Semiconductor light emitting device
	HANAMITSU KIYOSHI; SHIMA KATSUTO; OOSAKA SHIGEO; SEKI KATSUJI; FUJIWARA TAKAO
	1983-05-02
著作权人	FUJITSU KK
专利号	JP1983073180A
国家	日本
文献子类	发明申请
其他题名	Semiconductor light emitting device
英文摘要	PURPOSE:To generate two laser beams using one chip by arranging two electrodes interposing an impurity region between the two by a method wherein the stripe type impurity region to cross the center of a double hetero junction semiconductor layer and to demarcate a current passage having depth to reach a substrate is provided. CONSTITUTION:A current obstructing layer 5 and an active layer 6 to generate a laser oscillation are formed on a p type GaAs substrate 2, and the active layer 6 thereof is put between a first and a second clad layers 4, 7 having forbidden band gaps larger than the active layer 6 to form a double hetero junction semiconductor layer. A stripe type zinc diffusion region 20 to cross the center part of the semiconductor layer thereof and moreover having depth to reach the substrate 2 is provided, and electrodes 9, 9' are formed on both the sides of the region 20. A current 23 is made to flow toward the electrodes 9, 9' thereof to form laser beam emitting regions 21, 22 in the active layer 6 to enable to obtain two laser beams. The laser beam is outputted from the region 21 by applying a voltage to the electrode 9, and the laser beam is outputted from the region 22 when a voltage is applied to the electrode 9', and reliability of the device is enhanced.
公开日期	1983-05-02
申请日期	1981-10-27
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/81755]
专题	半导体激光器专利数据库
作者单位	FUJITSU KK
推荐引用方式 GB/T 7714	HANAMITSU KIYOSHI,SHIMA KATSUTO,OOSAKA SHIGEO,et al. Semiconductor light emitting device. JP1983073180A. 1983-05-02.

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