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	Manufacture of semiconductor laser device
	YAGI TETSUYA; KIMURA HIDE
	1989-11-21
著作权人	MITSUBISHI ELECTRIC CORP
专利号	JP1989289184A
国家	日本
文献子类	发明申请
其他题名	Manufacture of semiconductor laser device
英文摘要	PURPOSE:To prevent crystal defects in the vicinity of a re-grown interface for obtaining a laser device longer in service life and higher in reliability by a method wherein meltback is effected, just before the second epitaxial growth process, for the removal of a part of a P-type GaAs active Iayer and of an N-type GaAs current stopping Iayer oxidized in a stripe shape trench forming process. CONSTITUTION:In the first epitaxial growth process, an N-type GaAs layer 2, an N-type AlGaAs first clad Iayer 3, a P-type AlGaAs active layer 4, a P-type AlGaAs second clad layer 5, a P-type GaAs active Iayer 6, an N-type AlGaAs etching stopper layer 7, and an N-type GaAs current stopping layer 8 are formed, in that order, all on an N-type GaAs substrate A process follows wherein a P-type Al GaAs third clad layer 9 and a P-type GaAs contact layer 10 are deposited and made to grow by liquid phase epitaxy on the N-type GaAs current stopping layer 8, which is accomplished just after the removal in a meltback process of the surfaces exposed in the trench 11, which surfaces were oxidized when a trench 11 was provided, of the P-type GaAs active layer 6 and of the N-type GaAs current stopping Iayer 8. This method prevents the generation of a deep Ievel attributable to crystal defects.
公开日期	1989-11-21
申请日期	1988-05-16
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/81681]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORP
推荐引用方式 GB/T 7714	YAGI TETSUYA,KIMURA HIDE. Manufacture of semiconductor laser device. JP1989289184A. 1989-11-21.

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