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	Manufacture of semiconductor laser element
	SHIOMOTO TAKEHIRO
	1991-10-01
著作权人	SHARP CORP
专利号	JP1991222487A
国家	日本
文献子类	发明申请
其他题名	Manufacture of semiconductor laser element
英文摘要	PURPOSE:To stabilize a lateral mode of a laser oscillation by sequentially growing a clad layer and an active layer on a substrate formed with first, second grooves by liquid-phase epitaxy separating it into chips by the grooves, and independently laser-oscillating oscillation regions composed of the first groove. CONSTITUTION:Stripelike first grooves A1, B1, C1; A2, B2, C2 and second grooves D0, D1, D2 are formed in the same shape at an equal interval on the entire substrate 1a. A p-type GaAlAs first clad layer 3, a p-type GaAlAs active layer 4, an n-type GaAlAs second clad layer 5 and an n-type GaAs cap layer 6 are sequentially grown on the substrate 1 formed with the first, second grooves again by liquid-phase epitaxy. It is separated into chips by chip separating grooves, and oscillation regions formed of the first groove can be independently laser-oscillated. Thus, since a flat active layer can be formed on the first groove, the lateral mode of a laser oscillation can be stabilized.
公开日期	1991-10-01
申请日期	1990-01-29
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/81576]
专题	半导体激光器专利数据库
作者单位	SHARP CORP
推荐引用方式 GB/T 7714	SHIOMOTO TAKEHIRO. Manufacture of semiconductor laser element. JP1991222487A. 1991-10-01.

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