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	Semiconductor laser
	YAGI TETSUYA
	1988-10-31
著作权人	MITSUBISHI ELECTRIC CORP
专利号	JP1988263790A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser
英文摘要	PURPOSE:To hardly perform the absorption of a laser light at the end face of a laser and to increase a COD level by doping more than the quantity of P-type inverting a P-type impurity near the end face from the surface of the laser to a level of one half of an N-type second clad layer. CONSTITUTION:An impurity is so doped that a P-type is obtained from the surface of a laser near the end face of the laser to one half of an N-type second clad layer 6. Since a P-type-doped layer near the end face composes a P-N-P structure of this section, the clad layer 6 disposed directly below, a P-type active layer 5 and a P-type first clad layer 4, and a current flowing to the vicinity of the end face is blocked. Thus, it can prevent a laser light from being absorbed due to the heat generation at the end face owing to the current flowing near the end face, a laser light at the end face of a chip is absorbed to increase a so-called COD level in which the end face is damaged. Thus, the COD level can be raised without reducing the thickness of the active layer.
公开日期	1988-10-31
申请日期	1987-04-22
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/81548]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORP
推荐引用方式 GB/T 7714	YAGI TETSUYA. Semiconductor laser. JP1988263790A. 1988-10-31.

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