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	Semiconductor laser element
	YAMAMOTO SABUROU; MURATA KAZUHISA; HAYASHI HIROSHI; TAKENAKA TAKUO
	1982-10-23
著作权人	SHARP KK
专利号	JP1982172788A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser element
英文摘要	PURPOSE:To eliminate the unequal inclination of an impurity in the deviation region of the interface of an active layer by a method wherein an impurity doped in a crystal layer connected to an active layer and an active layer by a substrate side is made as the same kind of P type in a laser element which epitaxially grew multilayer crystal structure having the active layer on a P type semiconductor substrate. CONSTITUTION:A P type Ga1-yAlyAs clad layer 2' and a Ga1-xAlxAs active layer 3' doped the same impurity as that in the clad layer 2' are stacked on a P type GaAs substrate 1 for liquidus epitaxial growth. Namely, the active layer 3' is set as P type and the same kind of an impurity selected from Zn, Ge, Mg or the like is used as the impurity added to the layers 2' and 3'. In this way, unequally does not exist even if an impurity is mixed to the layer 3' from the layer 2'. After that, an N type Ga1-yAlyAs clad layer 4 and an N type GaAs cap layer 5 are stacked on the layer 3' for growth and if necessary, a current strangulation mechanism is provided.
公开日期	1982-10-23
申请日期	1981-04-15
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/81482]
专题	半导体激光器专利数据库
作者单位	SHARP KK
推荐引用方式 GB/T 7714	YAMAMOTO SABUROU,MURATA KAZUHISA,HAYASHI HIROSHI,et al. Semiconductor laser element. JP1982172788A. 1982-10-23.

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