QQ客服 官方微博 反馈留言

	Semiconductor laser array element
	ENDO KENJI
	1989-05-09
著作权人	NEC CORP
专利号	JP1989117082A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser array element
英文摘要	PURPOSE:To separate laser beams easily, and to improve the efficiency of utilization of an output by obtaining a semiconductor laser array element outputting two or more of beams, oscillation wavelengths of which differ and the planes of polarization of which mutually run parallel. CONSTITUTION:A semiconductor laser array element has two oscillation regions, and these regions are isolated by an isolation trench 11, and driven independently. The oscillation region is formed in a trench section in width of 5mum at the center of a ridge, and has an active layer 4 and a guide layer 3 thickened at the central section of the trench 11 and thinned in a peripheral section while being adjoined to the active layer 4. The refractive index of the guide layer 3 takes a value between the active layer 4 and an n-type clad layer 2. Currents are constricted by a striped p-type impurity diffusion region 8, and injected efficiently into the oscillation region. Overall width W including the trench 11 of the ridge is brought to 15mum in one and to 105mum in the other. The thickness of the active layers is made respectively to differ as 500Angstrom and 700Angstrom , thus making oscillation wavelengths differ as approximately 8250Angstrom and 8350Angstrom . Accordingly, the efficiency of utilization of an output is improved.
公开日期	1989-05-09
申请日期	1987-10-29
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/81357]
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	ENDO KENJI. Semiconductor laser array element. JP1989117082A. 1989-05-09.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。