Semiconductor laser array element | |
ENDO KENJI | |
1989-05-09 | |
著作权人 | NEC CORP |
专利号 | JP1989117082A |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Semiconductor laser array element |
英文摘要 | PURPOSE:To separate laser beams easily, and to improve the efficiency of utilization of an output by obtaining a semiconductor laser array element outputting two or more of beams, oscillation wavelengths of which differ and the planes of polarization of which mutually run parallel. CONSTITUTION:A semiconductor laser array element has two oscillation regions, and these regions are isolated by an isolation trench 11, and driven independently. The oscillation region is formed in a trench section in width of 5mum at the center of a ridge, and has an active layer 4 and a guide layer 3 thickened at the central section of the trench 11 and thinned in a peripheral section while being adjoined to the active layer 4. The refractive index of the guide layer 3 takes a value between the active layer 4 and an n-type clad layer 2. Currents are constricted by a striped p-type impurity diffusion region 8, and injected efficiently into the oscillation region. Overall width W including the trench 11 of the ridge is brought to 15mum in one and to 105mum in the other. The thickness of the active layers is made respectively to differ as 500Angstrom and 700Angstrom , thus making oscillation wavelengths differ as approximately 8250Angstrom and 8350Angstrom . Accordingly, the efficiency of utilization of an output is improved. |
公开日期 | 1989-05-09 |
申请日期 | 1987-10-29 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/81357] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | NEC CORP |
推荐引用方式 GB/T 7714 | ENDO KENJI. Semiconductor laser array element. JP1989117082A. 1989-05-09. |
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