QQ客服 官方微博 反馈留言

	-
	MITO IKUO
	1987-09-22
著作权人	NIPPON ELECTRIC CO
专利号	JP1987044878B2
国家	日本
文献子类	授权发明
其他题名	-
英文摘要	PURPOSE:To obtain the injection current-photo output characteristics for the titled semiconductor laser with excellent linearity by a method wherein, in the case of the buried type semiconductor laser of PNPN multilayer construction, a V-groove reaching a substrate is cut in the center part between a barrier layer and the current blocking layer located above the barrier layer, and a buffer layer and an active layer photo waveguide are laminated and buried. CONSTITUTION:A non-doped InGaAsP barrier layer 2 and a p type InP current blocking layer 3 are laminated and epitaxially grown on the n type InP substrate 1 in (001) direction, and a V-groove 20 is formed in the center part of the above in parallel to the direction by performing an etching in such a manner that the groove reaches the substrate Then, the bottom part of said groove is buried with an n type InP buffer layer 10, and an InGaAsP active layer photo waveguide 11 is formed on the layer 10. Subsequently, an n type InP buffer layer 4, a non-doped InGaAsP active layer 5, a p type InP clad layer 6 and a p type InGaAsP cap layer 7 are laminated and epitaxially grown on the whole surface excluding the photo waveguide 11, while an Au-Zn electrode 30 is coated on the layer 7 and an Au-Ge-Ni electrode 31 is coated on the back side of the substrate 1 respectively.
公开日期	1987-09-22
申请日期	1981-11-12
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/81346]
专题	半导体激光器专利数据库
作者单位	NIPPON ELECTRIC CO
推荐引用方式 GB/T 7714	MITO IKUO. -. JP1987044878B2. 1987-09-22.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。