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MITO IKUO | |
1987-09-22 | |
著作权人 | NIPPON ELECTRIC CO |
专利号 | JP1987044878B2 |
国家 | 日本 |
文献子类 | 授权发明 |
其他题名 | - |
英文摘要 | PURPOSE:To obtain the injection current-photo output characteristics for the titled semiconductor laser with excellent linearity by a method wherein, in the case of the buried type semiconductor laser of PNPN multilayer construction, a V-groove reaching a substrate is cut in the center part between a barrier layer and the current blocking layer located above the barrier layer, and a buffer layer and an active layer photo waveguide are laminated and buried. CONSTITUTION:A non-doped InGaAsP barrier layer 2 and a p type InP current blocking layer 3 are laminated and epitaxially grown on the n type InP substrate 1 in (001) direction, and a V-groove 20 is formed in the center part of the above in parallel to the direction by performing an etching in such a manner that the groove reaches the substrate Then, the bottom part of said groove is buried with an n type InP buffer layer 10, and an InGaAsP active layer photo waveguide 11 is formed on the layer 10. Subsequently, an n type InP buffer layer 4, a non-doped InGaAsP active layer 5, a p type InP clad layer 6 and a p type InGaAsP cap layer 7 are laminated and epitaxially grown on the whole surface excluding the photo waveguide 11, while an Au-Zn electrode 30 is coated on the layer 7 and an Au-Ge-Ni electrode 31 is coated on the back side of the substrate 1 respectively. |
公开日期 | 1987-09-22 |
申请日期 | 1981-11-12 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/81346] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | NIPPON ELECTRIC CO |
推荐引用方式 GB/T 7714 | MITO IKUO. -. JP1987044878B2. 1987-09-22. |
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