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	半導体レーザの製造方法
	阿部 雄次; 杉本 博司; 大塚 健一; 大石 敏之; 松井 輝仁
	1997-03-11
著作权人	三菱電機株式会社
专利号	JP2619057B2
国家	日本
文献子类	授权发明
其他题名	半導体レーザの製造方法
英文摘要	PURPOSE:To obtain a semiconductor lase of uniform coupling constant favorably in reproducibility by arranging the constitution such that a barrier layer and a diffraction grating layer are grown on an active layer, and etching is performed with a diffraction grating pattern as an etching mask so that it may reach the barrier layer, and thereon a clad layer is grown again. CONSTITUTION:An active layer 5, a barrier layer 23, and a diffraction grating layer 2b are crystal-grown in order on a substrate 1a. Moreover, the thickness of the barrier layer 23 is made s, and the thickness of the diffraction grating layer 2b is made t. Hereupon, the relation between s and t is s>t. The diffraction grating layer 2b in the region ls in length at and around the center of an element is removed. Thereafter, a uniform diffraction gating pattern is formed by two-beam interference exposure method, etc., and etching is done so that the depth may be not less than t and not more than s by chemical etching, etc., so as to form a diffraction grating 3 for distributed feedfack. And further, a clad layer 6 and a contact layer 7 are crystal-grown. Since the barrier layer 23 and the clad layer 6 are of the same composition, parallel stripes of a diffraction grating layer 4 do not exist in a phase shift region. Lastly, a p-electrode 8 and an n-electrode 9 are formed, and reflection preventive films 10 are formed at both ends.
公开日期	1997-06-11
申请日期	1989-05-22
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/81319]
专题	半导体激光器专利数据库
作者单位	三菱電機株式会社
推荐引用方式 GB/T 7714	阿部 雄次,杉本 博司,大塚 健一,等. 半導体レーザの製造方法. JP2619057B2. 1997-03-11.

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