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	Semiconductor laser array device
	HAMADA TAKESHI; KUME MASAHIRO; SHIMIZU YUICHI; WADA MASARU; ITO KUNIO
	1986-04-11
著作权人	MATSUSHITA ELECTRIC IND CO LTD
专利号	JP1986070783A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser array device
英文摘要	PURPOSE:To obtain a high-output semiconductor laser array device having the large ellipticity of a spot by forming three or more of mutually parallel ridges onto a substrate and shaping a striped current injection region just above groove sections among the ridges. CONSTITUTION:Five parallel ridges are formed in the direction on the (100) face of an N type GaAs substrate 1 while holding grooves. A first layer N type Ga1-yAlyAs clad layer 2, a second layer non-doped Ga1-xAlxAs active layer 3, a third layer Ga1-yAly As clad layer 4 and a fourth layer GaAs cap layer 5 are grown continuously onto the surface of the substrate 1 through a liquid phase epitaxial method. A P type impurity is diffused selectively to sections just above the grooves among the ridges on the substrate in a striped manner from a growing surface to shape zinc diffusion regions 8, diffusion fronts are made to reach the third layer Ga1-yAlyAs clad layer 4, a metal for a P side electrode is evaporated onto the growing surface, and a P side ohmic electrode 6 is formed through alloying treatment. An N side ohmic electrode is evaporated on the substrate side, and an N side ohmic electrode 7 is shaped through alloying treatment.
公开日期	1986-04-11
申请日期	1984-09-14
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/81049]
专题	半导体激光器专利数据库
作者单位	MATSUSHITA ELECTRIC IND CO LTD
推荐引用方式 GB/T 7714	HAMADA TAKESHI,KUME MASAHIRO,SHIMIZU YUICHI,et al. Semiconductor laser array device. JP1986070783A. 1986-04-11.

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