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	Semiconductor laser
	UENO SHINSUKE
	1983-01-24
著作权人	NIPPON DENKI KK
专利号	JP1983012389A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser
英文摘要	PURPOSE:To obtain a semiconductor laser whereof the threshold current is low, the whole of the active region is buried with a matter having a small refractive index, and the device has the characteristic to perform extremely stable fundamental mode oscillation, and at the same time, the device is enabled to be manufactured having favorable reproducibility easily by one time liquid phase growth. CONSTITUTION:An SiO2 film 11 is adhered on the (100) face of an InP insulating substrate 10doped with Fe, an opening is formed as to be formed perpendicularly to the (01-1) face, and the half of the SiO2 film is removed. Then the SiO2 film 11 is removed, a P type InP clad layer 12 is made to grow as to have thickness along the A face to 0.5mum, and then an undoped InGaAsP active layer (lambda=3mum)13 is made to grow as to have thickness along the A face to 0.2mum. Then liquid phase growth is performed continuously as to bury the whole with an N type Inp clad layer 14, and as to make the upper part of the upper row part of stair to have 2mum thickness, and the respective layers are made to grow at the same time. When the wafer is put in a vacuum quartz ampoule together with a diffusion source Cd2P3 and is heated, Cd is diffused up to 2.4mum depth, and the diffusion front 16 reaches in the P type InP clad layer 12 (Cd diffusion region 17). Then a P type electrode 18 and an N type electrode 19 are formed.
公开日期	1983-01-24
申请日期	1981-07-16
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/81043]
专题	半导体激光器专利数据库
作者单位	NIPPON DENKI KK
推荐引用方式 GB/T 7714	UENO SHINSUKE. Semiconductor laser. JP1983012389A. 1983-01-24.

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