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	Semiconductor laser device
	NAGAI SEIICHI
	1991-09-24
著作权人	MITSUBISHI ELECTRIC CORP
专利号	JP1991217067A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser device
英文摘要	PURPOSE:To enable quantity of light entering a monitor PD to be constant and controllability of laser light to be enhanced by forming a PbSn solder to be formed on a surface where a LD chip of a submount is bonded smaller than the area of the LD chip and by allowing a surface without solder to be coated with a metal whose surface state is stable such as gold. CONSTITUTION:In a semiconductor laser device where an LD chip 1 is assembled into a cooling block through a submount 2 as a heat stress relaxing material, a PbSn solder 10 is formed on a surface where the LD chip 1 of the submount 2 is bonded smaller than the area of the LD chip 1 and the surface of the submount 2 without the PbSn solder 10 is coated with a metal 11 whose surface state is stable such as gold, thus enabling light applied from the rear surface of the LD chip 1 to be reflected from a metal 11 whose surface state is stable such as gold and a certain amount of light to enter a monitor PD stably for improving controllability of light applied from laser.
公开日期	1991-09-24
申请日期	1990-01-22
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/80843]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORP
推荐引用方式 GB/T 7714	NAGAI SEIICHI. Semiconductor laser device. JP1991217067A. 1991-09-24.

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