Semiconductor laser device | |
NAGAI SEIICHI | |
1991-09-24 | |
著作权人 | MITSUBISHI ELECTRIC CORP |
专利号 | JP1991217067A |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Semiconductor laser device |
英文摘要 | PURPOSE:To enable quantity of light entering a monitor PD to be constant and controllability of laser light to be enhanced by forming a PbSn solder to be formed on a surface where a LD chip of a submount is bonded smaller than the area of the LD chip and by allowing a surface without solder to be coated with a metal whose surface state is stable such as gold. CONSTITUTION:In a semiconductor laser device where an LD chip 1 is assembled into a cooling block through a submount 2 as a heat stress relaxing material, a PbSn solder 10 is formed on a surface where the LD chip 1 of the submount 2 is bonded smaller than the area of the LD chip 1 and the surface of the submount 2 without the PbSn solder 10 is coated with a metal 11 whose surface state is stable such as gold, thus enabling light applied from the rear surface of the LD chip 1 to be reflected from a metal 11 whose surface state is stable such as gold and a certain amount of light to enter a monitor PD stably for improving controllability of light applied from laser. |
公开日期 | 1991-09-24 |
申请日期 | 1990-01-22 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/80843] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | MITSUBISHI ELECTRIC CORP |
推荐引用方式 GB/T 7714 | NAGAI SEIICHI. Semiconductor laser device. JP1991217067A. 1991-09-24. |
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