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	半導体レーザの製造方法
	岡村 茂; 田口 孝雄; 和田 修
	1994-10-12
著作权人	FUJITSU LTD
专利号	JP1994080858B2
国家	日本
文献子类	授权发明
其他题名	半導体レーザの製造方法
英文摘要	PURPOSE:To form a vertical and smooth laser resonator surface easily by shap ing an end surface through chemical etching first, irradiating the end surface by focused ion beams and finishing the end surface when the end surface of a Fabry-Perot type resonator is shaped. CONSTITUTION:A striped section 2 is formed to a wafer 1, into which a semiconductor laser, etc. consisting of an AlGaAs/GaAs group, etc. are manufactured, by using a photo-resist mask film 4 through a photo-lithography and chemical etching. Since sags are generated in the end surfaces 3 of the shaped striped section 2, the vertical and smooth end surfaces 3 are formed through the projection of Ga ion beams 5 as focused ion beams. Both end surfaces 3 are processed completely by ion beams 5, and damages due to processing are removed perfectly through heat treatment for approximately ten min at 500 deg.C. Accordingly, an excellent semiconductor laser, approximately 20mA oscillation threshold currents therefor may be used, is otained with superior reproducibility without depending upon a cleavage method.
公开日期	1994-10-12
申请日期	1984-11-20
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/80791]
专题	半导体激光器专利数据库
作者单位	FUJITSU LTD
推荐引用方式 GB/T 7714	岡村 茂,田口 孝雄,和田 修. 半導体レーザの製造方法. JP1994080858B2. 1994-10-12.

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