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	Semiconductor laser
	TODE ATSUSHI; YAMAMOTO SUNAO; IKEDA MASAO
	1991-12-06
著作权人	SONY CORP
专利号	JP1991276785A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser
英文摘要	PURPOSE:To enhance a PL Iight-emitting intensity and to realize a lower threshold value and a longer life by specifying the carrier concentration at interface sides coming into contact with an active layer and in its neighborhood of an AlGaInP-based n-type clad layer and an AlGaInP-based p-type clad layer. CONSTITUTION:Regarding carrier concentrations of individual clad layers 2, 4 at a DH-type AlGaInP-based semiconductor laser 10, the n-type carrier concentration at the n-type clad layer 2 is set at 2 to 3X10 cm and the p-type carrier concentration at the p-type clad layer 4 is set at 3 to 4X10cm; then, the carrier concentrations become optimum and a PL light-emitting intensity becomes maximum. At this time, only a part of several hundred Angstrom near an active layer 3 of the semiconductor laser is set to an optimum carrier concentration; the carrier concentration in parts other than the part near the active layer 3 is set to a comparatively large carrier concentration as in conventional cases. As a result, the PL light-emitting intensity is enhanced without a drop in the element characteristic such as a drop in the carrier mobility or the like. Thereby, characteristics of a low threshold value, a long life and the like can be enhanced.
公开日期	1991-12-06
申请日期	1990-03-27
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/80772]
专题	半导体激光器专利数据库
作者单位	SONY CORP
推荐引用方式 GB/T 7714	TODE ATSUSHI,YAMAMOTO SUNAO,IKEDA MASAO. Semiconductor laser. JP1991276785A. 1991-12-06.

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