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	半導体発光装置
	高野 信司
	1999-04-30
著作权人	日本電気株式会社
专利号	JP2921053B2
国家	日本
文献子类	授权发明
其他题名	半導体発光装置
英文摘要	PURPOSE:To acquire a BH laser of little leak current bar providing a second semiconductor layer between a semiconductor substrate and an active layer and a third semiconductor layer between the second semiconductor layer and the active layer and by providing a groove which is removed at least as far as the second semiconductor layer to both sides of a light emitting region. CONSTITUTION:After a p-InP buffer layer 20, a p-InGaAsP layer 30, a p-InP layer 40, an undoped InGaAsP active layer 50, an n-InP clad layer 60 are formed one by one on a p-InP substrate 10, a U-shaped groove is formed by Br etching solution. After a photoresist 5 is formed by photolithography, the n-InP layer 60, the InGaAsP 50, and the p-InP layer 40 outside the groove are removed one by one by selective etching. After the photoresist 5 is removed, a p-InP block layer 70, a p-InP block layer 80, an n-InP buried layer 90, an n-InGaAsP contact layer 95 are formed one by one by LPE method. According to this constitution, a leak current flowing to a buried layer can be minimized.
公开日期	1999-07-19
申请日期	1990-07-19
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/80510]
专题	半导体激光器专利数据库
作者单位	日本電気株式会社
推荐引用方式 GB/T 7714	高野 信司. 半導体発光装置. JP2921053B2. 1999-04-30.

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