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	MUROTANI TOSHIO; ISHII JUN; OOMURA ETSUJI
	1984-06-16
著作权人	MITSUBISHI ELECTRIC CORP
专利号	JP1984025399B2
国家	日本
文献子类	授权发明
其他题名	-
英文摘要	PURPOSE:To obtain a semiconductor laser having long lifetime with low oscillation threshold value by forming a multilayer of semiconductor layer by epitaxial growth in a groove formed on a substrate and forming an active region by a selective melt- back process. CONSTITUTION:A groove 15 is formed on the main surface of an N type InP substrate 1, a resist 16 is removed, and N type InP layer 7, N type InGaAsP layer 2, P type InP layer 3 are epitaxially grown. then, it is melt back in In solution containing unsaturated P. The layers 3, and then 2 are dissolved, and while the InGaAsP is dissolving, the Ga density of the In solution is increased, and N type InP is difficult to be dissolved, and the melt back can be stopped at the position designated by a broken line 10. Thereafter, the P type InP layer 8, the P type InGaAsP layer 9 are grown, an insulating film 11, and electrodes 20, 21 are formed, and there can be formed a buried hetero junction type semiconductor laser.
公开日期	1984-06-16
申请日期	1979-11-28
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/80383]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORP
推荐引用方式 GB/T 7714	MUROTANI TOSHIO,ISHII JUN,OOMURA ETSUJI. -. JP1984025399B2. 1984-06-16.

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