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	Semiconductor laser
	HIRAYAMA NORIYUKI; OOSHIMA MASAAKI; TAKENAKA NAOKI; KINO YUKIHIRO
	1985-08-28
著作权人	MATSUSHITA DENKI SANGYO KK
专利号	JP1985165781A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser
英文摘要	PURPOSE:To obtain a preferable sole longitudinal mode oscillation by providing a neck having a reflecting surface parallel to a resonator to perpendicularly reflect part of a laser light in a striped active layer substantially at the center of the striped active layer. CONSTITUTION:An N type InP clad layer 2, an N type InGaAsP active layer 3, a P type InP clad layer 4, and a P type InGaAsP cap layer 5 are continuously grown on an N type InP substrate Then, a striped mesa structure having a neck 10 having a surface parallel to a resonator surface is formed. Then, a P type InP layer 6, an N type InP layer 7 are grown as a current blocking layer. Part of the laser light in the layer 3 is repeatedly reflected on the resonator surface 11 of the both ends of the resonator by the neck 10 of the width W2 (
公开日期	1985-08-28
申请日期	1984-02-08
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/80314]
专题	半导体激光器专利数据库
作者单位	MATSUSHITA DENKI SANGYO KK
推荐引用方式 GB/T 7714	HIRAYAMA NORIYUKI,OOSHIMA MASAAKI,TAKENAKA NAOKI,et al. Semiconductor laser. JP1985165781A. 1985-08-28.

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