Semiconductor laser | |
HIRAYAMA NORIYUKI; OOSHIMA MASAAKI; TAKENAKA NAOKI; KINO YUKIHIRO | |
1985-08-28 | |
著作权人 | MATSUSHITA DENKI SANGYO KK |
专利号 | JP1985165781A |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Semiconductor laser |
英文摘要 | PURPOSE:To obtain a preferable sole longitudinal mode oscillation by providing a neck having a reflecting surface parallel to a resonator to perpendicularly reflect part of a laser light in a striped active layer substantially at the center of the striped active layer. CONSTITUTION:An N type InP clad layer 2, an N type InGaAsP active layer 3, a P type InP clad layer 4, and a P type InGaAsP cap layer 5 are continuously grown on an N type InP substrate Then, a striped mesa structure having a neck 10 having a surface parallel to a resonator surface is formed. Then, a P type InP layer 6, an N type InP layer 7 are grown as a current blocking layer. Part of the laser light in the layer 3 is repeatedly reflected on the resonator surface 11 of the both ends of the resonator by the neck 10 of the width W2 ( |
公开日期 | 1985-08-28 |
申请日期 | 1984-02-08 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/80314] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | MATSUSHITA DENKI SANGYO KK |
推荐引用方式 GB/T 7714 | HIRAYAMA NORIYUKI,OOSHIMA MASAAKI,TAKENAKA NAOKI,et al. Semiconductor laser. JP1985165781A. 1985-08-28. |
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