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	Manufacture of semiconductor light emitting element
	KAMIJIYOU TAKESHI; USHIKUBO TAKASHI; HASHIMOTO AKIHIRO; KOBAYASHI MASAO
	1985-11-20
著作权人	OKI DENKI KOGYO KK
专利号	JP1985233879A
国家	日本
文献子类	发明申请
其他题名	Manufacture of semiconductor light emitting element
英文摘要	PURPOSE:To contrive the reduction of internal strain generating by impurity doping by a method wherein the growing temperature is restricted to a specific range of temperature in growing an Si-doped GaAs active layer on a GaAs substrate. CONSTITUTION:An n type AlGaAs layer 2 is grown on an n type GaAs substrate 1, and the Si-doped GaAs active layer 3 is grown on this layer 2 at a temperature within a range of 840-940 deg.C. Thereafter, a p type AlGaAs layer 4 is grown on the layer 3. This layer 3 is doped with Si at a high concentration in order to obtain a desired band of infrared wavelength. However, the doping of high concentration impurities into a semiconductor region produces strains in a crystal lattice on account of the difference in size between the atom constituting the mother crystal and the impurity atom. A growing temperature of 840-940 deg.C can be used as a condition for the epitaxial growth of high concentration SiGa in order to inhibit said strain.
公开日期	1985-11-20
申请日期	1984-05-02
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/80256]
专题	半导体激光器专利数据库
作者单位	OKI DENKI KOGYO KK
推荐引用方式 GB/T 7714	KAMIJIYOU TAKESHI,USHIKUBO TAKASHI,HASHIMOTO AKIHIRO,et al. Manufacture of semiconductor light emitting element. JP1985233879A. 1985-11-20.

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