Manufacture of semiconductor light emitting element | |
KAMIJIYOU TAKESHI; USHIKUBO TAKASHI; HASHIMOTO AKIHIRO; KOBAYASHI MASAO | |
1985-11-20 | |
著作权人 | OKI DENKI KOGYO KK |
专利号 | JP1985233879A |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Manufacture of semiconductor light emitting element |
英文摘要 | PURPOSE:To contrive the reduction of internal strain generating by impurity doping by a method wherein the growing temperature is restricted to a specific range of temperature in growing an Si-doped GaAs active layer on a GaAs substrate. CONSTITUTION:An n type AlGaAs layer 2 is grown on an n type GaAs substrate 1, and the Si-doped GaAs active layer 3 is grown on this layer 2 at a temperature within a range of 840-940 deg.C. Thereafter, a p type AlGaAs layer 4 is grown on the layer 3. This layer 3 is doped with Si at a high concentration in order to obtain a desired band of infrared wavelength. However, the doping of high concentration impurities into a semiconductor region produces strains in a crystal lattice on account of the difference in size between the atom constituting the mother crystal and the impurity atom. A growing temperature of 840-940 deg.C can be used as a condition for the epitaxial growth of high concentration SiGa in order to inhibit said strain. |
公开日期 | 1985-11-20 |
申请日期 | 1984-05-02 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/80256] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | OKI DENKI KOGYO KK |
推荐引用方式 GB/T 7714 | KAMIJIYOU TAKESHI,USHIKUBO TAKASHI,HASHIMOTO AKIHIRO,et al. Manufacture of semiconductor light emitting element. JP1985233879A. 1985-11-20. |
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