QQ客服 官方微博 反馈留言

	Manufacture of semiconductor element
	SAWAI MASAAKI; ITOU MITSUO
	1984-12-27
著作权人	HITACHI SEISAKUSHO KK
专利号	JP1984232475A
国家	日本
文献子类	发明申请
其他题名	Manufacture of semiconductor element
英文摘要	PURPOSE:To manufacture high quality semiconductor laser elements by making grooves for cracking on one surface of a wafer which is cleaved from one end of the groove by an external force into narrow strips and separating these along the grooves for cracking. CONSTITUTION:In a wafer 1 which has multi-parallel buried hetero-construction in stripes, an N type clad layer 4, an active layer 2 and a P type clad layer 5 are formed sequentially on the substrate 3. Next, an inverted mesa type stripe part 6 is formed. On the etching groove of the main surface of the wafer 1, a P type block layer 7 and an N type buried layer 8 are grown. On the main surface, an insulation film 9 is also partially formed. On the back surface of the wafer 1, V type grooves for cracking are provided. On one end of the wafer 1, an external force of constant interval is applied to crack along the cracking plane of the crystal into separate strips.
公开日期	1984-12-27
申请日期	1983-06-15
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/80227]
专题	半导体激光器专利数据库
作者单位	HITACHI SEISAKUSHO KK
推荐引用方式 GB/T 7714	SAWAI MASAAKI,ITOU MITSUO. Manufacture of semiconductor element. JP1984232475A. 1984-12-27.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。