| 半導体レーザ装置 | |
| 堀田 等 | |
| 1998-10-23 | |
| 著作权人 | 日本電気株式会社 |
| 专利号 | JP2841599B2 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ装置 |
| 英文摘要 | PURPOSE:To reduce an astigmatic difference by a method wherein both the sides of the mesa stripe part of a p-type AlGaInP cladding layer are filled with Zn-doped AlInP layers which absorbs a laser beam oscillated in an active layer only a little and has a high resistance. CONSTITUTION:An n-type AlGaInP cladding layer 2, a GaInP active layer 3 and a p-type AlGaInP cladding layer 4 having a mesa stripe part are successively formed on an n-type GaAs substrate Zn-doped AlInP layers 8 are provided on both the sides of the mesa stripe part. AlInP has the largest band gap and the smallest refractive index among AlGaInP liquid crystal family. Therefore, if the AlInP layers 8 are formed on both the sides of the mesa stripe made of p-type AlGaInP, a laser beam oscillated in the GaInP active layer 3 is hardly absorbed. With this constitution, an astigmatic difference can be reduced. |
| 公开日期 | 1998-12-24 |
| 申请日期 | 1989-12-25 |
| 状态 | 失效 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80178]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電気株式会社 |
| 推荐引用方式 GB/T 7714 | 堀田 等. 半導体レーザ装置. JP2841599B2. 1998-10-23. |
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