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	Semiconductor laser
	MATSUMOTO KENJI
	1985-07-25
著作权人	TOSHIBA KK
专利号	JP1985140774A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser
英文摘要	PURPOSE:To obtain laser oscillator beams, in which there exists hardly wavefront aberration, by each executing an optical waveguide in the direction parallel with a semiconductor substrate by an index waveguide in the vicinity of the end surface of a resonator and by a gain waveguide at a central section. CONSTITUTION:Recessed sections 50, 51 are formed to the four corners and central section of a P-semiconductor substrate 20. A current blocking layer 21 is grown on the substrate 20. A striped groove 60 penetrating the layer 21 is formed. A P-clad layer 22, an active layer 23, an N-clad layer 24 and an N- ohmic layer 25 are grown on the substrate 20, and an N side electrode 26 and a P wide electrode 27 are shaped. A semiconductor laser having the structure is wave-guided by a gain waveguide at the central section of a resonator. Consequently, the semiconductor laser is operated under a longitudinal-mode multi- axial oxsillation state in which there is hardly reflection noises. The semiconductor laser is affected by the absorption action of beams of the substrate 20 in the vicinity of the end surface of the resonator, and lase oscillation beams are wave-guided equivalently by an index waveguide. Accordingly, laser oscillation beams, in which these exists hardly wavefront aberration, are radiated from the end surface of the resonator.
公开日期	1985-07-25
申请日期	1983-12-28
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/80158]
专题	半导体激光器专利数据库
作者单位	TOSHIBA KK
推荐引用方式 GB/T 7714	MATSUMOTO KENJI. Semiconductor laser. JP1985140774A. 1985-07-25.

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