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	Manufacture of semiconductor laser
	YAMAZAKI SUSUMU
	1990-07-20
著作权人	FUJITSU LTD
专利号	JP1990186689A
国家	日本
文献子类	发明申请
其他题名	Manufacture of semiconductor laser
英文摘要	PURPOSE:To prevent a distributed feedback diffraction grating from deforming by a method wherein a guide layer formed of a third semiconductor and a diffraction grating deformation preventive layer formed of a second semiconductor whose forbidden bandwidth is the same as that of the third semiconductor are provided onto a first semiconductor substrate to form a diffraction grating. CONSTITUTION:A diffraction grating deformation preventive layer 5 of an InGaAsP layer of specified forbidden bandwidth is formed on an n-InP substrate 1 through a MOCVD method. Then, a diffraction grating of photoresist is formed through a interference exposure method, and a diffraction grating 12 is formed on the n-InP substrate 1 through etching using the above diffraction grating of photoresist. Next, a guide layer 2 of an n-InGaAsP layer, an active layer of an InGaAsP layer, and an upper clad layer 4 of a p-InP layer are successively formed through a MOCVD method. As mentioned above, if a III-V compound semiconductor of four elements is formed on the top faces of the ridges of the diffraction grating 12, the diffraction grating 12 can be effectively prevented from deforming even in a vapor phase growth process, and even if the diffraction grating deformation preventive layer 5 is left unremoved, the diffraction grating 12 does not decrease in feedback efficiency.
公开日期	1990-07-20
申请日期	1989-01-13
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/80122]
专题	半导体激光器专利数据库
作者单位	FUJITSU LTD
推荐引用方式 GB/T 7714	YAMAZAKI SUSUMU. Manufacture of semiconductor laser. JP1990186689A. 1990-07-20.

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