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	Semiconductor light emitting device
	UDA MASAHITO; OYA AKIRA; OTOSHI SO
	1992-12-15
著作权人	HITACHI LTD
专利号	JP1992363086A
国家	日本
文献子类	发明申请
其他题名	Semiconductor light emitting device
英文摘要	PURPOSE:To obtain a blue semiconductor laser and to utilize it for a light source, etc., for a high density optical disk by disposing third semiconductor containing composition of Zn (S, Se) interposed to be held between first semiconductor and second semiconductor containing composition of (Cd, Zn)S on a GaAs or ZnSe substrate. CONSTITUTION:An N-doped p-type Zn0.43Cd0.57S clad layer 2 is grown 3mum thick on a p-type GaAs substrate 1 in plane (100), heated to 350 deg.C, then a ZnS0.08 Se0.92 active layer 3 is grown 0.03mum, and an Al-doped n-type Zn0.43Cd0.57S clad layer 4 is grown 1mum thereon. A current narrowing structure is formed by reactive ion etching(RIE) using BF3 as an etchant, insulated by a high resistance SiO2 region 5, an electrode 6 is then formed, and wired 7. When a forward bias DC 4V is applied to this semiconductor element, a blue laser light having 50meV of a half value width at 454nm of a wavelength as a central wavelength is obtained from a cleaved surface at the ambient temperature.
公开日期	1992-12-15
申请日期	1991-10-11
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/79534]
专题	半导体激光器专利数据库
作者单位	HITACHI LTD
推荐引用方式 GB/T 7714	UDA MASAHITO,OYA AKIRA,OTOSHI SO. Semiconductor light emitting device. JP1992363086A. 1992-12-15.

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