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	Semiconductor laser device
	WADA HIROSHI; HORIKAWA HIDEAKI; MATSUI YASUHIRO
	1990-09-28
著作权人	OKI ELECTRIC IND CO LTD
专利号	JP1990244690A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser device
英文摘要	PURPOSE:To prevent the recombination of holes with electrons and to obtain a laser device excellent in high speed modulation property by a method wherein an n-type layer is provided between a current constriction layer and a p-type layer in contact with it. CONSTITUTION:A waveguide layer 31 and an active layer 33 both of GaInAsP are provided on to a p-InP substrate 2, and an n-InP clad layer 35 and an n- GaInAsP cap 37 are laminated thereon through an epitaxial growth method. An SiO2 mask 45 is provided, and the substrate 27 is etched using a mixed solution of hydrochloric acid and nitric acid in the ratio 1:2 to form a double hetero-structure 29, whose side face is made vertical to the substrate 27. In succession, an n-InP hole diffusion block layer 47 and an Fe doped InP current constriction layer 39 are vapor-grown on both the sides of a mesa to make the surface flat. The mask 45 is removed, an SiO2 film 45 is formed on the current constriction layer 39, an n-side electrode 41a of Au-Ge-Ni alloy and a p-side electrode of 41b Au-Zn alloy are provided, and thus a semiconductor laser device is completed. A hole diffusion block layer being provided, the recombination of electrons with holes is prevented, a leakage current is reduced, and an optical output is prevented from deteriorating.
公开日期	1990-09-28
申请日期	1989-03-16
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/79492]
专题	半导体激光器专利数据库
作者单位	OKI ELECTRIC IND CO LTD
推荐引用方式 GB/T 7714	WADA HIROSHI,HORIKAWA HIDEAKI,MATSUI YASUHIRO. Semiconductor laser device. JP1990244690A. 1990-09-28.

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