QQ客服 官方微博 反馈留言

	Semiconductor laser
	NAMISAKI HIROBUMI
	1989-07-20
著作权人	MITSUBISHI ELECTRIC CORP
专利号	JP1989183191A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser
英文摘要	PURPOSE:To reduce an operation current and to simply form electrodes by narrowing an interval between impurity diffused regions at an active layer position to be diffused with the impurity near an active layer as compared with the width of a clad layer of an electrode forming side. CONSTITUTION:A p-type impurity of Zn, Be or the like is implanted by an ion implanting method to a surface including a MQW active layer 1 of a region etched at both sides for holding a stripe, thereby forming an ion implanted region 60. Then, a mask 50 is removed, the implanted impurity is diffused and moved by heat treating so that the interval between the diffused parts becomes 2mum or less at the layer In this case, the thickness of an n-type AlGaAs clad layer 2 is sufficiently increased to eliminate the influence of the diffused part to an n-type GaAs contact layer 20, and a p-type electrode 100 and an n-type electrode 101 are eventually formed. Thus, the threshold value of an operation current can be reduced, and a laser having a stable oscillation mode is obtained.
公开日期	1989-07-20
申请日期	1988-01-14
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/79440]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORP
推荐引用方式 GB/T 7714	NAMISAKI HIROBUMI. Semiconductor laser. JP1989183191A. 1989-07-20.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。