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	Semiconductor light-emitting element and manufacture thereof
	HINO ISAO
	1988-04-04
著作权人	NEC CORP
专利号	JP1988073582A
国家	日本
文献子类	发明申请
其他题名	Semiconductor light-emitting element and manufacture thereof
英文摘要	PURPOSE:To realize a semiconductor light-emitting element having structure excellently controlling a transverse mode easily with superior controllability and reproducibility, and to manufacture the semiconductor light-emitting element having high performance with high yield and excellent productivity by forming an etching stopping layer damaging no waveguide mechanism. CONSTITUTION:Etching is conducted for seven min by a phosphoric acid group etchant. Sections 14 not coated with an SiO2 film 13 of a P-GaAs cap layer 8 and a P-Al0.5In0.5P layer 7 are removed through etching for approximately six min, and an (Al0.4Ga0.6)0.5In0.5P layer 5 (an etching stopping layer) is hardly etched. Since etching can be stopped positively by the (Al0.4Ga0.6)0.5In0.5P layer 5 even when the layers 8 and 7 are etched for a little longer time, remaining thickness can be controlled with high yield and high accuracy. When an N-GaAs layer is grown in 2mum through an MOVPE method, etc., it is not grown on the SiO2 film 13, and can be grown selectively, and a buried layer consisting of an N-GaAs layer 6 can be shaped. An Al0.5In0.5P three-dimensional layer is used as the principal section of a clad layer.
公开日期	1988-04-04
申请日期	1986-09-16
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/79385]
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	HINO ISAO. Semiconductor light-emitting element and manufacture thereof. JP1988073582A. 1988-04-04.

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