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	半導体レーザ装置
	河西 秀典; 林 寛; 矢野 盛規; 森本 泰司; 山口 雅広
	1996-09-05
著作权人	シャープ株式会社
专利号	JP2558767B2
国家	日本
文献子类	授权发明
其他题名	半導体レーザ装置
英文摘要	PURPOSE:To obtain a highly reliable laminated structure even in the state of a high output power, by forming the laminated structure having a Ga1-yAlyAs layer having a stripe like opening, a current passage having a width that is narrower than that of the opening and provided in the opening, and a Ga1-zAlzAs layer. CONSTITUTION:An n-type Ga0.58Al0.42As layer 19 and an undopped GaAs etchback layer 20 are caused to grow on a substrate 11 and with the exception of only the width part W3 of 7mum in the layer 19, all of them are removed. Then, an n-type GaAs current blocking layer 12a is caused to grow and a V-shaped groove 1 is formed in order to make up a laser stripe. The V-groove 1 is formed so that it may reach the substrate 11 and an electric passage is opened. Further, a p-type Ga0.58Al0.42As clad layer 13, a p-type or an n-type Ga0.86Al0.14As active layer 14, an n-type Ga0.58Al0.42 As clad layer 15, and an n-type GaAs contact layer 16 are caused to grow. Subsequently, p-side and n-side electrodes 21 and 22 are provided. After carrying out an alloy treatment, cleavage is performed to make up a laser resonator. The current passage having a width narrower than that of a light emitting region is formed and as a result, optical absorption at a current bottleneck layer is decreased and higher order beam mode oscillations are suppressed by the above current passage.
公开日期	1996-11-27
申请日期	1987-12-29
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/79338]
专题	半导体激光器专利数据库
作者单位	シャープ株式会社
推荐引用方式 GB/T 7714	河西 秀典,林 寛,矢野 盛規,等. 半導体レーザ装置. JP2558767B2. 1996-09-05.

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