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	Manufacture of semiconductor laser
	FUKUNAGA TOSHIAKI; TAKAMORI TAKESHI; NAKAJIMA HISAO
	1987-06-18
著作权人	KOGYO GIJUTSUIN
专利号	JP1987134986A
国家	日本
文献子类	发明申请
其他题名	Manufacture of semiconductor laser
英文摘要	PURPOSE:To manufacture a multiple quantum well (MQW) refractive index wave AlGaAs semiconductor laser in simple manufacturing steps without using Zn diffusing step by diffusing in a lower optical guide except a portion etched in a stripe of an Si layer, and damaging the right and left multiplex quantum well structures of the optical guide to become in a disorder state to form a current narrowing layer. CONSTITUTION:An N-type GaAs suffer layer 2, an N-type AlxGa1-xAs/GaAs MQW buffer layer 3, an N-type AlxGa1-xAs clad layer 4, an N-type AlyGa1-yAs optical guide layers 5, an N-type AlzGa1-zAs/GaAs MQW active layer 6, a P-type AlyGa1-yAs optical guide layer 7, a P-type AlwGa1-wAs/GaAs MQW optical guide layer 8, and a P-type GaAs cap layer 9 are sequentially laminated on a first molecular beam epitaxially grown N-type GaAs (100) substrate Thereafter, an Si layer 10 is deposited at low temperature, and an As-coated layer 11 is formed on the layer 10. The layers 10 and 11 are removed in a strip shape, and heat treated while applying As pressure. Further, a P-type AlxGa1-xAs clad layer 12 and a P-type GaAs contact layer 13 are laminated by second molecular beam epitaxially growing method. The shaded region of MQW of the layer 8 is disordered by the second growth, and the shaded region becomes N-type and a current narrowing layer by diffusing Si.
公开日期	1987-06-18
申请日期	1985-12-09
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/79317]
专题	半导体激光器专利数据库
作者单位	KOGYO GIJUTSUIN
推荐引用方式 GB/T 7714	FUKUNAGA TOSHIAKI,TAKAMORI TAKESHI,NAKAJIMA HISAO. Manufacture of semiconductor laser. JP1987134986A. 1987-06-18.

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