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	Semiconductor laser device
	ITSUSHIKI KUNIHIKO
	1985-05-15
著作权人	MITSUBISHI DENKI KK
专利号	JP1985085588A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser device
英文摘要	PURPOSE:To ensure high geographical accuracy and easy assembly by a method wherein residual stress after an assembly process is mitigated by integrating a submount and a monitoring photoreceiving element into a single body. CONSTITUTION:Portions of an N layer 6c and Si substrate 6a supporting a semiconductor laser chip 1 mitigate the stress generated on the chip 1 by a heat- radiating block 3, and serve as a submount. The surface of the layer 6c facing the cleavage plane of the chip 1 functions as the photoreceiving plane of a photoreceiving element. The photoreceiving element is so constructed that photoelectric current generated across the P-N junction produced along the area between the layer 6c anc P type epitaxial layer 6b is detected at a terminal connected to an electrode 6f and to the block 3. In such a construction, the submount 6 and a photoreceiving element can easily be unified into a single body.
公开日期	1985-05-15
申请日期	1983-10-17
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/79280]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI DENKI KK
推荐引用方式 GB/T 7714	ITSUSHIKI KUNIHIKO. Semiconductor laser device. JP1985085588A. 1985-05-15.

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