Semiconductor laser device | |
NAITO, YUMI; OKADA, SATORU; FUJIMOTO, TSUYOSHI | |
2001-09-04 | |
著作权人 | MITSUI CHEMICALS INC. |
专利号 | US6285699 |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Semiconductor laser device |
英文摘要 | On an n-GaAs substrate are sequentially formed an n-GaAs buffer layer, an n-AlGaAs cladding layer, a non-doped InGaAs active layer, a p-AlxGa1-xAs cladding layer, a p-GaAs contact layer, and further an n-AlGaAs current blocking layer having a stripe-like window is embedded in the cladding layer. At the active layer side interface of the current blocking layer, a diffraction grating of cyclic bumps and dips shape is formed, but the diffraction grating is not formed in a region of the stripe-like window where the current blocking layer is not present, i.e., a current injection region. In this way, a semiconductor laser device of low oscillation threshold, high oscillation efficiency, high reliability, long life time, and stabilized oscillation wavelength can be realized. |
公开日期 | 2001-09-04 |
申请日期 | 1998-09-30 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/79266] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | MITSUI CHEMICALS INC. |
推荐引用方式 GB/T 7714 | NAITO, YUMI,OKADA, SATORU,FUJIMOTO, TSUYOSHI. Semiconductor laser device. US6285699. 2001-09-04. |
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