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	Semiconductor laser device
	NAITO, YUMI; OKADA, SATORU; FUJIMOTO, TSUYOSHI
	2001-09-04
著作权人	MITSUI CHEMICALS INC.
专利号	US6285699
国家	美国
文献子类	授权发明
其他题名	Semiconductor laser device
英文摘要	On an n-GaAs substrate are sequentially formed an n-GaAs buffer layer, an n-AlGaAs cladding layer, a non-doped InGaAs active layer, a p-AlxGa1-xAs cladding layer, a p-GaAs contact layer, and further an n-AlGaAs current blocking layer having a stripe-like window is embedded in the cladding layer. At the active layer side interface of the current blocking layer, a diffraction grating of cyclic bumps and dips shape is formed, but the diffraction grating is not formed in a region of the stripe-like window where the current blocking layer is not present, i.e., a current injection region. In this way, a semiconductor laser device of low oscillation threshold, high oscillation efficiency, high reliability, long life time, and stabilized oscillation wavelength can be realized.
公开日期	2001-09-04
申请日期	1998-09-30
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/79266]
专题	半导体激光器专利数据库
作者单位	MITSUI CHEMICALS INC.
推荐引用方式 GB/T 7714	NAITO, YUMI,OKADA, SATORU,FUJIMOTO, TSUYOSHI. Semiconductor laser device. US6285699. 2001-09-04.

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