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	半導体レーザの製法
	成井 啓修; 平田 照二
	1999-06-18
著作权人	ソニー株式会社
专利号	JP2940106B2
国家	日本
文献子类	授权发明
其他题名	半導体レーザの製法
英文摘要	PURPOSE:To obtain a DFB laser which can oscillate a required single wavelength by a method wherein a layer is epitaxially grown sequentially on the main face of a semiconductor substrate on which a stripe-shaped mesa protrusion has been formed along a direction at a prescribed angle to the crystal-axis direction and a diffraction grating is formed on the side face of the epitaxial growth layer. CONSTITUTION:A semiconductor substrate 1 on which a stripe-shaped mesa protrusion 2 has been formed along a direction at an angle theta (where 0 deg. crystal-axis direction and which is provided with a (100) crystal plane is prepared. A stripe-shaped epitaxial growth layer 30 is formed sequentially on its main face 1A. At this time, when the stripe- shaped epitaxial growth layer 30 is formed by an ordinary MOCVD method, i.e. by an MOCVD method by using a methyl-based organic metal as a raw-material gas, a direction in which the stripe-shaped mesa protrusion 2 is extended is tilted at theta deg. from the crystal-axis direction. As a result, when a (111) B crystal plane is produced almost spontaneously, a slope 10 composed of the (111) B crystal plane is formed to be a step shape or a sawtooth shape. Consequent by, an active layer 4 is provided with the side face in the step shape or the sawtooth shape; a diffraction grating 13 is formed; the pitch of the diffraction grating 13 is controlled by changing the angle theta from the crystal-axis direction of the stripe- shaped mesa protrusion 2.
公开日期	1999-08-25
申请日期	1990-08-30
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/79262]
专题	半导体激光器专利数据库
作者单位	ソニー株式会社
推荐引用方式 GB/T 7714	成井 啓修,平田 照二. 半導体レーザの製法. JP2940106B2. 1999-06-18.

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