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	Semiconductor laser
	MITSUNARI TOSHIHIRO; MURAKAMI ATSUSHI
	1985-05-08
著作权人	NIPPON DENKI KK
专利号	JP1985080288A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser
英文摘要	PURPOSE:To obtain the titled device of high reliability by a method wherein the cap layer of a semiconductor laser chip is removed in stripe form, and an epitaxial layer of the reverse conductivity type to that of the cap layer is superposed, resulting in providing a current path. CONSTITUTION:The cap layer 16 is removed down to the second clad layer 15 in stripe form, and the epitaxial layer (second cap layer) 18 of the same conductivity type as that of the layer 15 is formed. At this time, since the layers 18 and 16 are different in the conductivity type, and the layers 18 and 15 are the same in the conductivity type, the current increases in the density because of no expansion with the layer 18 as its path. This construction enables the avoidance of the deterioration of the active layer due to diffusion. The active layer 14 can be isolated from an adhesion surface 17 by sufficient thickening of the layer 18, and the deterioration of the active layer due to stress application and solder creep-up can be prevented at the time of chip mounting; accordingly the titled device of high reliability can be obtained.
公开日期	1985-05-08
申请日期	1983-10-07
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/79258]
专题	半导体激光器专利数据库
作者单位	NIPPON DENKI KK
推荐引用方式 GB/T 7714	MITSUNARI TOSHIHIRO,MURAKAMI ATSUSHI. Semiconductor laser. JP1985080288A. 1985-05-08.

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