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	Semiconductor laser device
	OKADA, MASATO; KOHNO, MASAKI; YAGI, TETSUYA
	1991-05-21
著作权人	MITSUBISHI DENKI KABUSHIKI KAISHA
专利号	US5018158
国家	美国
文献子类	授权发明
其他题名	Semiconductor laser device
英文摘要	A semiconductor laser device includes an n type first cladding layer and a multi quantum well active layer successively grown on an n type substrate, a p type second cladding layer having a stripe ridge narrower in the neighborhood of the laser cavity facets than within the laser disposed on the active layer, a p type buffer layer containing p type dopants in a higher concentration than in the second cladding layer and disposed on the second cladding layer except on the stripe ridge, an n type current blocking layer disposed on the buffer layer, and a p type contact layer disposed on an upper surface of the stripe ridge and the second cladding layer and the current blocking layer, the multi quantum well being disordered except directly opposite the wider portion of the stripe ridge by the diffusion of p type dopant impurities from the p type buffer layer.
公开日期	1991-05-21
申请日期	1990-01-30
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/79086]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI DENKI KABUSHIKI KAISHA
推荐引用方式 GB/T 7714	OKADA, MASATO,KOHNO, MASAKI,YAGI, TETSUYA. Semiconductor laser device. US5018158. 1991-05-21.

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