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	半導体レーザ
	松岡 隆志; 柴田 典義
	1994-07-20
著作权人	日本電信電話株式会社
专利号	JP1994054825B2
国家	日本
文献子类	授权发明
其他题名	半導体レーザ
英文摘要	PURPOSE:To obtain a high efficiency, a high output and a high speed modulation characteristic and to obtain a semiconductor laser having an easy manufacturing process and high yield production by burying a buried region of a side face parallel to the light propagating direction of a stripelike active region with a semi-insulating group II-VI compound material. CONSTITUTION:A current is injected from a metal electrode 8 to arrive at a metal electrode 9. In this case, the current is narrowed by an insulating diffusion stopping layer 6 and a buried layer 7, and injected only to an active layer 3. Since the layers 6, 7 are formed of a material having lower equivalent refractive index when a semiconductor substrate 1, a clad layer 2, an active layer 3, a clad layer 4 and a cap layer 5 are regarded as being one layer, the light can be enclosed in the layer 3. Further, since the layers 6, 7 are transparent, the light oozed from the layer 3 to the layers 6, 7 is not absorbed. Further, since the layers 6, 7 between the electrodes 8 and 9 do not have a junction in an elevational direction, no electric capacity is provided, and a high efficiency, a high output, a low threshold and a high speed modulation are performed.
公开日期	1994-07-20
申请日期	1987-11-20
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/79063]
专题	半导体激光器专利数据库
作者单位	日本電信電話株式会社
推荐引用方式 GB/T 7714	松岡 隆志,柴田 典義. 半導体レーザ. JP1994054825B2. 1994-07-20.

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