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	Variable wavelength semiconductor laser
	SASAKI TATSUYA; SAKATA YASUTAKA
	1992-10-05
著作权人	NEC CORP
专利号	JP1992279078A
国家	日本
文献子类	发明申请
其他题名	Variable wavelength semiconductor laser
英文摘要	PURPOSE:To reduce the occurrence of leakage currents so as to increase the optical output of the title laser and widen the wavelength variable width by inverting a laminated n-type semiconductor contact layer and semiconductor current blocking layer to p-type and bringing an n-type semiconductor base layer into contact with the n-type semiconductor contact layer. CONSTITUTION:InGaP tuning layer 4, n-type InP base layer 5, active layer 6, the first p-type clad layer 7 are formed by selective growth. All of an n-type InGaAsP contact layer 11, p-type current block layer 13, and n-type current block layer 14 which are grown after an SiO2 film is removed are formed of InGaAsP similar to the layer 7 and the layer thickness on the (111) B plane is made extremely thin. In addition, the n-type layers formed on the (111) B plane are inverted to p-type so that the layers do not interfere with a laser driving current 41 flowing to the first clad layer 7.
公开日期	1992-10-05
申请日期	1991-01-08
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/79048]
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	SASAKI TATSUYA,SAKATA YASUTAKA. Variable wavelength semiconductor laser. JP1992279078A. 1992-10-05.

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