Piezoelectricity of ZnO films prepared by sol-gel method

CORC > 力学研究所 > 中国科学院力学研究所 > 力学所知识产出(1956-2008)

	Piezoelectricity of ZnO films prepared by sol-gel method
	Zhang KM; Zhao YP(赵亚溥); He FQ(何发泉); Liu DQ; Zhao YP
	2007
会议名称	6th China International Conference on Nanoscience and Technology
会议日期	2007
通讯作者邮箱	yzhao@imech.ac.cn
会议地点	Chengdu, PEOPLES R CHINA
关键词	Zno Thin Films Piezoelectric Coefficient Piezo-Response Force Microscope Sol-Gel Surface Roughness Resistivity
页码	721-726
通讯作者	Zhao YP
中文摘要	ZnO piezoelectric thin films were prepared on crystal substrate Si(111) by sol-gel technology, then characterized by scanning electron microscopy, X-ray diffraction and atomic force microscopy (AFM). The ZnO films characterized by X-ray diffraction are highly oriented in (002) direction with the growing of the film thickness. The morphologies, roughness and grain size of ZnO film investigated by AFM show that roughness and grain size of ZnO piezoelectric films decrease with the increase of the film thickness. The roughness dimension is 2.188-0.914 nm. The piezoelectric coefficient d(33) was investigated with a piezo-response force microscope (PFM). The results show that the piezoelectric coefficient increases with the increase of thickness and (002) orientation. When the force reference is close to surface roughness of the films, the piezoelectric coefficient measured is inaccurate and fluctuates in a large range, but when the force reference is big, the piezoelectric coefficient d(33) changes little and ultimately keeps constant at a low frequency.
收录类别	CPCI-S
会议录	Chinese Journal Of Chemical Physics
会议录出版者	Beijing
会议录出版地	Science China Press
语种	英语
ISSN号	1003-7713
WOS记录号	WOS:000252031900021
内容类型	会议论文
源URL	[http://dspace.imech.ac.cn/handle/311007/25480]
专题	力学研究所_力学所知识产出(1956-2008)
通讯作者	Zhao YP
推荐引用方式 GB/T 7714	Zhang KM,Zhao YP,He FQ,et al. Piezoelectricity of ZnO films prepared by sol-gel method[C]. 见:6th China International Conference on Nanoscience and Technology. Chengdu, PEOPLES R CHINA. 2007.