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	Semiconductor laser
	HIRAYAMA NORIYUKI; OOSHIMA MASAAKI; TAKENAKA NAOKI; TOYODA YUKIO
	1985-08-28
著作权人	MATSUSHITA DENKI SANGYO KK
专利号	JP1985165782A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser
英文摘要	PURPOSE:To obtain a high longitudinal mode unity with good reproducibility by forming a structure that two resonators are formed adjacently in a semiconductor laser. CONSTITUTION:An N type InP clad layer 2, an N type InGaAsP active layer 3, a P type InP clad layer 4, and a P type InGaAsP cap layer 5 are continuously grown on an (100) N type InP substrate 1, and a stripped mesa structure is formed in (011) direction. Then, a P type InP layer 6, an N type InP layer 7 are buried as a current blocking layer. Then, a groove 11 is formed at the position deeper than the layer 3 in (010) direction. Then, a semi-insulating InP layer 8 having a refractive index smaller than the layer 3 is buried in the layer 1 Thus, the laser light in the layer 3 is partly reflected in the boundary from the layer 8, and partly transmitted. As a result, preferable single longitudinal mode oscillation is obtained by the inner reflecting interference effect that the resonance mode determined by the divided length is interfered with the resonance mode determined by the entire length of the resonator.
公开日期	1985-08-28
申请日期	1984-02-08
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/78943]
专题	半导体激光器专利数据库
作者单位	MATSUSHITA DENKI SANGYO KK
推荐引用方式 GB/T 7714	HIRAYAMA NORIYUKI,OOSHIMA MASAAKI,TAKENAKA NAOKI,et al. Semiconductor laser. JP1985165782A. 1985-08-28.

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