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	Semiconductor light-emitting element
	SEKI AKINORI; KUDO ATSUSHI; KOBA MASAYOSHI
	1987-01-07
著作权人	SHARP CORP
专利号	JP1987001293A
国家	日本
文献子类	发明申请
其他题名	Semiconductor light-emitting element
英文摘要	PURPOSE:To enable a multi-functionating element b forming a single crystal AlP layer and multilayer thin-film superlattice layers consisting of AlInP and AlP onto an Si substrate and growing GaInP, AlInP, etc. on these layers. CONSTITUTION:As is implanted to an N-type or insulating Si substrate 1 to form an N layer 2, and twenty layers in total of Se-doped AlP layers 3 and Se-doped AlP strain superlattice layers 4 under decompression, and a Se-doped Al0.5In0.5P clad layer 5, an undoped Ga0.5In0.5P active layer 6 and a Zn-doped Al0.5In0.5P clad layer 7 are shaped. An Al electrode 8 is formed through electron beam evaporation as one for leading out a lower layer electrode, PSG 9 for isolating an element is shaped, and Au 10 is formed through electron beam evaporation as an upper layer electrode.
公开日期	1987-01-07
申请日期	1985-06-26
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/78709]
专题	半导体激光器专利数据库
作者单位	SHARP CORP
推荐引用方式 GB/T 7714	SEKI AKINORI,KUDO ATSUSHI,KOBA MASAYOSHI. Semiconductor light-emitting element. JP1987001293A. 1987-01-07.

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