QQ客服 官方微博 反馈留言

	Semiconductor light emitting device
	ISHIKAWA HIROSHI
	1990-06-19
著作权人	FUJITSU LTD
专利号	JP1990159086A
国家	日本
文献子类	发明申请
其他题名	Semiconductor light emitting device
英文摘要	PURPOSE:To obtain a hysteresis light output characteristic using only one power supply and miniaturize the device by burying saturable absorbing material in a recess of an diffraction grating. CONSTITUTION:When a current is caused to flow by applying a forwardly biased voltage between a P electrode 8 and an N electrode 9, light is emitted from an active layer 5 through recombination of electrons and positive holes. The light emitted from the active layer 5 is amplified at the recessed and projecting part while repeating reflection. Whereas, the light has a wavelength of 3mum corresponding to the composition of the active layer 5, so that it proceeds in a waveguide layer 4, whose composition corresponds to a wavelength of 2mum, without absorption loss, but it is absorbed by a saturable absorbing material 3, whose composition corresponds to a wavelength of 35mum, buried in the recesses of the recessed and projecting part. Accordingly, the light output characteristic is such that the oscillation start path and the oscillation stop path are different. Thus, a hysteresis light output characteristic can be obtained by using only one power supply.
公开日期	1990-06-19
申请日期	1988-12-13
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/78620]
专题	半导体激光器专利数据库
作者单位	FUJITSU LTD
推荐引用方式 GB/T 7714	ISHIKAWA HIROSHI. Semiconductor light emitting device. JP1990159086A. 1990-06-19.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。