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	Manufacture of semiconductor element
	JINDOU MASAAKI
	1984-10-15
著作权人	NIPPON DENKI KK
专利号	JP1984181083A
国家	日本
文献子类	发明申请
其他题名	Manufacture of semiconductor element
英文摘要	PURPOSE:To form a flat active layer having less crystal defect by adding Sn to growing solution containing Te and using N type III-V group compound formed by liquid phase epitaxial grown. CONSTITUTION:A P type GaAs layer 2 is formed by liquid phase epitaxial growth on an N type GaAs substrate 1, selectively etched to form a groove 3 of depth reaching the substrate Then, an N type Al0.4Ga0.6As layer 15, an Al0.12 Ga0.88As active layer 5, a P type Al0.4Ga0.6As layer 6, and a P type GaAs layer 7 are sequentially formed on the substrate by liquid phase epitaxial growth. The solution for growing the layer 15 uses solution which contains Te and Sn added. Thus, the surface of the active layer 15 is formed flat, the layer 5 formed thereon is formed flat, thereby reducing the crystal defect.
公开日期	1984-10-15
申请日期	1983-03-30
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/78593]
专题	半导体激光器专利数据库
作者单位	NIPPON DENKI KK
推荐引用方式 GB/T 7714	JINDOU MASAAKI. Manufacture of semiconductor element. JP1984181083A. 1984-10-15.

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