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	Manufacture of semiconductor laser
	JINDOU MASAAKI; KAWANO HIDEO; AMANO TOSHIMASA
	1984-07-11
著作权人	NIPPON DENKI KK
专利号	JP1984119781A
国家	日本
文献子类	发明申请
其他题名	Manufacture of semiconductor laser
英文摘要	PURPOSE:To enable to form flatly an epitaxial layer in a later process by a method wherein the side surface and the upper surface are cleaned with a solution containing an element whose standard oxidation-reduction potential is negative and absolute value is 1 or more, after mesa etching. CONSTITUTION:An N type clad layer 2, an N type guide layer 3, an active layer 4, and a P type clad layer 5 are formed on an N type GaAs substrate Next, a mesa is formed by selective etching from the layer 5 to the depth reaching the substrate Then, before the second liquid growing process, the oxide layer of the mesa is removed by cleaning the side surface and the upper surface of the mesa with the solution containing the element such as Al, Mg, and Be whose standard oxidation-reduction potential is negative and absolute value is 1 or more. Thereafter, a P type layer 6, an N type layer 7, a P type layer 8, and a P type layer 9 are successively formed by the second liquid epitaxial growth. This process enables to form current block layers 6 and 7 with good controllability of shape, further thereafter form the epitaxial layer flatly over the entire surface of the crystal. Thereby, the efficiency of thermal dissipation can be improved by tightly contacting an electrode on a heat sink.
公开日期	1984-07-11
申请日期	1982-12-24
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/78553]
专题	半导体激光器专利数据库
作者单位	NIPPON DENKI KK
推荐引用方式 GB/T 7714	JINDOU MASAAKI,KAWANO HIDEO,AMANO TOSHIMASA. Manufacture of semiconductor laser. JP1984119781A. 1984-07-11.

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