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	Semiconductor light-emitting element
	NISHI KENICHI
	1987-09-22
著作权人	NEC CORP
专利号	JP1987216278A
国家	日本
文献子类	发明申请
其他题名	Semiconductor light-emitting element
英文摘要	PURPOSE:To reduce the lowering of luminous efficiency, and to obtain high-speed optical-output modulation characteristics by intentionally doping an impurity only to a semiconductor layer having wide forbidden band-width in semiconductor multilayer structure. CONSTITUTION:An S-doped N-type InP buffer layer 12 in 2mum, a light-emitting section 15 consisting of four cycles of undoped In0.75Ga0.25As0.54P0.46 layers 13 in 200Angstrom and Zn-doped P-type InP layers 14 in 200Angstrom , a Zn-doped P-type InP clad layer 16 in 2mum, an undoped InP clad layer 17 in 0.5mum are laminated on an S-doped N-type InP substrate 11 in succession. SiO2 18 is attached onto the surface, electrodes 19 are formed to upper and lower sections, and nonreflective coating 20 is executed on one end surface. Accordingly, non- radiative centers having an effect on actual carrier recombination are decreased in a light-emitting section, and one carrier density at positions where carrier recombination is generated is increased, thus hardly lowering luminous efficiency.
公开日期	1987-09-22
申请日期	1986-03-17
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/78515]
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	NISHI KENICHI. Semiconductor light-emitting element. JP1987216278A. 1987-09-22.

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