| 半導体レーザ装置 | |
| 渡辺 幸雄; 岡島 正季; 波多腰 玄一 | |
| 1999-04-02 | |
| 著作权人 | 株式会社東芝 |
| 专利号 | JP2908480B2 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ装置 |
| 英文摘要 | PURPOSE:To eliminate difficulties and complexities in control of a laser manufacturing process and to decrease a forward voltage and a series resistance by a method wherein an intermediate band gap layer is formed of GaAlAs instead of InGaP which is used in a conventional one. CONSTITUTION:An n-In0.5(Ga0.3Al0.7)0.5P clad layer 12, an InGaP active layer 13, a p-In0.5(Ga0.3Al0.7)0.5P clad layer 14, and a p-Ga0.4Al0.6As intermediate contact layer 15 are grown on an n-GaAs substrate 1 to form a double-hetero structure. The p-Ga0.4Al0.6As intermediate contact layer 15 and the p-In0.5(Ga0.3Al0.7)0.5P clad layer 14 are etched up to a halfway point of the layer 14 with hot phosphoric acid using an SiO2 film 18 as a mask to form a stripe-like mesa 19. At this point, the etching rate of a p-Ga0.4Al0.6As intermediate contact layer to hot phosphoric acid is made equal or so to that of a p-In0.5(Ga0.3Al0.7)0.5P clad layer. |
| 公开日期 | 1999-06-21 |
| 申请日期 | 1989-09-29 |
| 状态 | 失效 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78443]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社東芝 |
| 推荐引用方式 GB/T 7714 | 渡辺 幸雄,岡島 正季,波多腰 玄一. 半導体レーザ装置. JP2908480B2. 1999-04-02. |
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