QQ客服 官方微博 反馈留言

	Light emitting element
	HACHIMAN AKIHIRO; KOMATSUBARA TADASHI
	1984-12-03
著作权人	TOSHIBA KK
专利号	JP1984213181A
国家	日本
文献子类	发明申请
其他题名	Light emitting element
英文摘要	PURPOSE:To obtain the titled element of a high luminous efficiency and high speed response excellent in mass productivity and suitable as the light source for optical communication by a method wherein the hole concentration of a P type GaAlAs active layer doped with Ge is set within a specific range. CONSTITUTION:A P type GaAlAs cld layer 2, a P type GaAlAs active layer 3 doped with Ge, and an N type GaAlAs clad layer 4 are formed by successive lamination on a P type GaAs substrate The first electrode 5 is formed on the lower surface of said substrate 1, and the second electrode 6 on the upper surface of said clad layer 4. In such a construction, the control of the hole concentration of said active layer 3 at 1X10cm-5X10cm causes the response at 20MHz or more and light emitting output at 2mW or more. The hole concentration of said layer 3 is in accordance with the doping amount of Ge doped to this layer 3, and the hole concentration can be easily controlled based on the condition for Ge doping.
公开日期	1984-12-03
申请日期	1983-05-19
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/78388]
专题	半导体激光器专利数据库
作者单位	TOSHIBA KK
推荐引用方式 GB/T 7714	HACHIMAN AKIHIRO,KOMATSUBARA TADASHI. Light emitting element. JP1984213181A. 1984-12-03.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。