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	Semiconductor laser device
	MARUNO SHIGEMITSU; SUGIMOTO HIROSHI; NOMURA YOSHITOKU; OGATA HITOSHI
	1989-11-20
著作权人	光技術研究開発株式会社
专利号	JP1989287982A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser device
英文摘要	PURPOSE:To modulate under a low current injecting condition at a high speed by shifting the bottom of the conduction band of a collector layer to an energy position equal to or smaller than n=1 quantum level, and discharging electrons by tunneling from a base layer to the collector layer. CONSTITUTION:An optical waveguide is formed of an emitter layer 2 having a conduction band disposed at its bottom at an energy position for supplying electrons by tunneling to a quantum level of n=2 or more of electrons, and a collector layer 6 having a band gap larger than that of a quantum well and a conduction band disposed at its bottom at an energy position larger than n=1 of quantum level of the electrons as clad layers. A bias voltage is applied between the layers 5 and 6 to shift the bottom of the conduction band of the layer 6 to an energy position having equal to or smaller than n=1 quantum level, thereby discharging the electrons by tunneling from the layer 5 to the layer 6. Thus, a high modulation speed is obtained under low current injecting condition.
公开日期	1989-11-20
申请日期	1988-05-16
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/78378]
专题	半导体激光器专利数据库
作者单位	光技術研究開発株式会社
推荐引用方式 GB/T 7714	MARUNO SHIGEMITSU,SUGIMOTO HIROSHI,NOMURA YOSHITOKU,et al. Semiconductor laser device. JP1989287982A. 1989-11-20.

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