Semiconductor luminescent device | |
TANAHASHI TOSHIYUKI | |
1985-12-23 | |
著作权人 | FUJITSU KK |
专利号 | JP1985260182A |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Semiconductor luminescent device |
英文摘要 | PURPOSE:To lower the threshold current and to raise the efficiency by a method wherein the semiconductor luminescent device is made into such a structure that current is concentratedly run to the active region utilizing a difference of resistivity. CONSTITUTION:An N type InP layer 2 and a P type InP layer 8 are deposited on an N type InP layer 1 having a striped protrusion, covering the striped protrusion with the layers 2 and 8 and as a semiconductor layer having a resistivity higher than that of the N type InP layer A V-shaped groove 6 is carved in the P type InP layer 8 on the striped protrusion in such a way as to reach into the N type InP layer This semiconductor luminescent device is made into a structure, wherein an N type InP layer 7, an InGaAsP layer to be used as an active layer 3 and a P type InP layer 4 are deposited in this groove. The light emission is performed by a double hetero-junction, which is constituted holding the active layer 3, which is the InGaAsP layer, between the N type InP layer 7 and the P type InP layer 4. In such a structure, current concentration to the active region is good, and furthermore, the stopping of leakage current in parts other than the active region can be performed by a P-N junction, which is formed of the N type InP layer 7 and the P type InP layer 8. |
公开日期 | 1985-12-23 |
申请日期 | 1984-06-06 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/78339] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | FUJITSU KK |
推荐引用方式 GB/T 7714 | TANAHASHI TOSHIYUKI. Semiconductor luminescent device. JP1985260182A. 1985-12-23. |
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