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	半導体レーザ素子及びその製造方法
	厚主 文弘; 中津 弘志; 猪口 和彦; 奥村 敏之; 関 章憲; 滝口 治久
	1996-03-29
著作权人	シャープ株式会社
专利号	JP1996034334B2
国家	日本
文献子类	授权发明
其他题名	半導体レーザ素子及びその製造方法
英文摘要	PURPOSE:To obtain a laser device capable of controlling the width of an active layer with high accuracy by filling a groove cut in a dielectric film with a mesa-shaped laminated structure including an active layer and by both-siding this laminated structure with a buried layer. CONSTITUTION:A groove 10 cut in a dielectric film 2 on an n-type InP substrate 1 is filled with a multilayered film 11 comprising a mesa-striped laminated structure of Si-doped n-type InP clad layer 3, non-doped GaInAsP active layer 4, Zn-doped p-type InP clad layer 5,and Zn-doped p-type GaInAsP contact layer 6 in this order upward, thereby forming a double hetero structure. The region of the substrate 1 except where the multilayered film spreads is overlaid with a Fe-doped InP current block layer 7, as the buried layer, which has a resistance higher than that of the multilayered film 11 to cover the side of the multilayered film. This constitution can stabilize lateral mode of oscillation and reduce dispersion in characteristics of devices.
公开日期	1996-03-29
申请日期	1989-12-12
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/78310]
专题	半导体激光器专利数据库
作者单位	シャープ株式会社
推荐引用方式 GB/T 7714	厚主 文弘,中津 弘志,猪口 和彦,等. 半導体レーザ素子及びその製造方法. JP1996034334B2. 1996-03-29.

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