Semiconductor laser and manufacture thereof | |
NAGAI YUTAKA | |
1989-10-11 | |
著作权人 | MITSUBISHI ELECTRIC CORP |
专利号 | JP1989253985A |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Semiconductor laser and manufacture thereof |
英文摘要 | PURPOSE:To perform a high output operation of a semiconductor laser by providing an inverting region on a region except the vicinity of the end faces of both resonators of an active layer, and forming an N-type non-inverting region of the active layer near the end face of the resonator into a window structure region. CONSTITUTION:An N-type first clad layer 2, an N-type active layer 3, a P-type second clad layer 4 and an N-type current blocking layer 5 are sequentially formed on a semiconductor board 1, and a stripelike groove 8 is formed in the layer 5 except the vicinity of its end face. A P-type third clad layer 6 and a P-type contact layer 7 are formed on the layer 4 in the groove 8, an inverting region 9 is provided on a region except the vicinity of the end faces of both the resonator of the layer 3, and the N-type non-inverting region of the layer 3 near the end face of the resonator is formed in a window structure region. Thus, a high output operation can be performed. |
公开日期 | 1989-10-11 |
申请日期 | 1988-04-04 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/78299] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | MITSUBISHI ELECTRIC CORP |
推荐引用方式 GB/T 7714 | NAGAI YUTAKA. Semiconductor laser and manufacture thereof. JP1989253985A. 1989-10-11. |
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