QQ客服 官方微博 反馈留言

	Semiconductor laser and manufacture thereof
	NAGAI YUTAKA
	1989-10-11
著作权人	MITSUBISHI ELECTRIC CORP
专利号	JP1989253985A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser and manufacture thereof
英文摘要	PURPOSE:To perform a high output operation of a semiconductor laser by providing an inverting region on a region except the vicinity of the end faces of both resonators of an active layer, and forming an N-type non-inverting region of the active layer near the end face of the resonator into a window structure region. CONSTITUTION:An N-type first clad layer 2, an N-type active layer 3, a P-type second clad layer 4 and an N-type current blocking layer 5 are sequentially formed on a semiconductor board 1, and a stripelike groove 8 is formed in the layer 5 except the vicinity of its end face. A P-type third clad layer 6 and a P-type contact layer 7 are formed on the layer 4 in the groove 8, an inverting region 9 is provided on a region except the vicinity of the end faces of both the resonator of the layer 3, and the N-type non-inverting region of the layer 3 near the end face of the resonator is formed in a window structure region. Thus, a high output operation can be performed.
公开日期	1989-10-11
申请日期	1988-04-04
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/78299]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORP
推荐引用方式 GB/T 7714	NAGAI YUTAKA. Semiconductor laser and manufacture thereof. JP1989253985A. 1989-10-11.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。