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	Manufacture of semiconductor laser element
	KONDO MASAFUMI; SUYAMA NAOHIRO; TAKAHASHI KOUSEI; HOSODA MASAHIRO; SASAKI KAZUAKI; HAYAKAWA TOSHIRO
	1990-01-19
著作权人	シャープ株式会社
专利号	JP1990015689A
国家	日本
文献子类	发明申请
其他题名	Manufacture of semiconductor laser element
英文摘要	PURPOSE:To form a semiconductor laser element possessed of an excellent oscillating property by a method wherein a semiconductor layer, which uses a group IV amphoteric element as a dopant, is grown on semiconductor growth faces of a substrate possessed of different Miller indexes respectively through a molecular beam epitaxy method. CONSTITUTION:A Cr doped semi-insulating GaAs substrate 31 of a normal mesa provided with a single slope is formed, where a semiconductor growth face 31a of a sloping 111A face (A denotes a group III element face) and a semiconductor growth face 31b of a 100 face are formed thereon. The following are successively grown on the semiconductor growth faces 31a and 31b through an MBE method: a non-doped high resistance GaAs buffer layer 32; a non-doped high resistance Al0.4Ga0.6As current block layer 33; a Si doped Al0.32Ga0.68As clad layer 34; a Si doped GaAs active layer 35; a Si doped Al0.32Ga0.68As clad layer 36; and a Si doped GaAs contact layer 37. Next, each p-n junction of the Si doped GaAs contact layer 37 and the Si doped GaAs contact layer 37 on the uppermost layer side above the semiconductor growth layer 31b are etched. Thereafter, a current block layer 38 is formed on the etched section. And, an n-type electrode 39 of AuGe/Ni and a p-type electrode 40 of Au/AuZn are evaporated. Then, the substrate 31 is abraded and then divided into chips.
公开日期	1990-01-19
申请日期	1988-07-01
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/78284]
专题	半导体激光器专利数据库
作者单位	シャープ株式会社
推荐引用方式 GB/T 7714	KONDO MASAFUMI,SUYAMA NAOHIRO,TAKAHASHI KOUSEI,et al. Manufacture of semiconductor laser element. JP1990015689A. 1990-01-19.

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